Semiconductor Heterostructures and New Forms of Devices

机译：半导体异质结构和新型器件

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The ultimate limitations of electronic transport in semiconductor heterostructure layers and superlattices are investigated. The potential of these layers for novel semiconductor device applications is assessed. (Author)

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Hess, K.;
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年度 1986
页码 p.1-18
总页数 18
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Semiconductors; Group iii compounds; Group iv compounds; Heterojunctions; Mobility; Electrons; Monte carlo method; Doping; Tunneling;

机译：半导体; III族化合物; IV族化合物;异质结;迁移率;电子;蒙特卡罗方法;掺杂;隧穿;

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机译：高性能石墨烯/半导体范德瓦尔斯异质结构光电器件
2. Numerical Modeling of Fluctuation Phenomena in Semiconductors and Detailed Noise Study of Mid-Wave Infrared -Heterostructure Devices [J] . K. Jozwikowski, A. Rogalski, A. Jozwikowska Journal of Electronic Materials . 2002,第7期

机译：半导体中波动现象的数值模拟和中波红外超结构器件的详细噪声研究
3. Large ferroelectric-polarization-modulated photovoltaic effects in bismuth layered multiferroic/semiconductor heterostructure devices [J] . Yan Jian-Min, Wang Ke, Xu Zhi-Xue, Journal of Materials Chemistry, C. materials for optical and electronic devices . 2021,第9期

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4. N-type and p-type ferromagnetic semiconductors: High Curie temperature and heterostructure devices [C] . Le Duc Anh, Nguyen Thanh Tu, Kosuke Takiguchi, 応用物理学会秋季学術講演会;応用物理学会 . 2019

机译：N型和p型铁磁半导体：居里温度高和异质结构的器件
5. Selective oxidation of aluminum-bearing III-V semiconductors: Properties and applications to quantum well heterostructure lasers and transistor devices. [D] . Chen, Eugene I-Chun. 1996

机译：含铝III-V半导体的选择性氧化：量子阱异质结构激光器和晶体管器件的特性和应用。
6. Semiconductors: High‐Performance Nonvolatile Organic Field‐Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers (Adv. Sci. 8/2017) [O] . Wen Li, Fengning Guo, Haifeng Ling, 2017

机译：半导体：基于并五苯/ P13 /并五苯作为电荷传输层和陷阱层的有机半导体异质结构的高性能非易失性有机场效应晶体管存储器（Adv。Sci。8/2017）
7. Selective oxidation of aluminum-bearing III-V semiconductors: Properties and applications to quantum well heterostructure lasers and transistor devices [O] . Chen Eugene I-Chun 1996

机译：含铝III-V半导体的选择性氧化：量子阱异质结构激光器和晶体管器件的特性和应用

Semiconductor Heterostructures and New Forms of Devices

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