Preparation and Investigation of Amorphous Gallium Arsenide Films

摘要

A new method for the preparation of a-GaAs films -- Plasma Enhanced Chemical Transport Deposition (PECTD) is described. The experimental results indicate that a bright smooth surface, a nearly stoichiometric composition and a good reproducibility of the a-GaAs films could be obtained if proper technological conditions were selected and controlled. The growth mechanism of PECTD is also discussed. Keywords: Amorphous semiconductors; Thin films; Arsenic trichloride.