Photoelectrochemical Cells Based on Inhomogeneous Semiconductor Electrodes

摘要

A dead-layer model based on PL intensity can be applied to two families of inhomogeneous electrodes used in PEC's: isotype heterojunctions and strained-layer superlattices. The dead-layer model assumes that electron-hole pairs formed within a distance on the order of the depletion width do not recombine. This mode was used to map the electric field in the aforementioned inhomogeneous electrodes. The dead-layer model can be refined to yield absolute depletion widths and surface recombination velocities of n-GaAs semiconducting electrodes in PEC's employing aqueous telluride electrolyte. The simple dead-layer model has also been used successfully on semiconductors whose surfaces have been modified for chemical reactivity.