Electron Spin Resonance Studies of Amorphous Semiconductors

摘要

Electron spin resonance (ESR) experiments in amorphous semiconductors have provided important and detailed information concerning the electronic wave functions of paramagnetic states located within the energy gap. Even when the ground states are diamagnetic, optical excitation can be employed to produce paramagnetic configurations. Often the optically-induced paramagnetism in amorphous semiconductors is metastable. Keywords: Electron spin resonance, ESR, Amorphous semiconductors, Paramagnetism, and Defects.