Negative Differential Conductivity in Lateral Surface Superlattices

摘要

We have used electron-beam lithography in single level poly(methymethacrylate) (PMMA) to fabricate a novel quantum device in which a lateral surface superlattice is used for the gate of a high-electron-mobility transistor. We have observed strong negative differential conductivity which we believe is due to the onset of Bloch oscillations.