16 GHz Analog and 16-Gbit/S Digital Modulation of p-Type Substrate Mass-Transported Diode Lasers

摘要

Efficient, low-threshold 1.3 micrometer diode lasers grown on p-type substrates have been studied for both small-signal analog and large-signal digital high-speed applications. The lasers are very efficient with differential quantum efficiencies as high as 34% per facet which yields low insertion loss in an optical link. The lowest cw threshold is 4.5 mA. A small-signal -3-dB frequency as high as 16.4 GHz has been measured with a 175 micro-long laser. The laser responds to large-signal digital word sequences at rates of 16 Gbit/s.