Relaxation Model for Memory with High Storage Density

机译：高存储密度记忆的弛豫模型

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摘要

A relaxation model is presented based on an N dimensional Coulomb potential. The model has arbitrarily large storage capacity and, in addition, well-defined basins of attraction about stored memory states. The model is compared with the Hopfield relaxation model. Keywords: High density storage model; Hopfield model; Relaxation.

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Bachmann, C. M.; Cooper, L. N.; Dembo, A.; Zeitouni, O.;
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年度 1987
页码 p.1-12
总页数 12
原文格式 PDF
正文语种 eng
中图分类工业技术 ;
关键词
Storage; High density; Models; Capacity(Quantity); Relaxation model;

机译：储存;高密度;模型;容量（数量）;松弛模型;

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2. A quasi-matrix ferroelectric memory for future silicon storage - a new high-density and high-speed nonvolatile memory using ferroelectric film [J] . Toshiyuki Nishihara, Yasuyuki Ito 電子情報通信学会技術研究報告. 集積回路. Integrated Circuits and Devices . 2002 ,第3期

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5. Low-Density Parity-Check Codes for Data Storage and Memory Systems. [D] . Jeon, Seungjune. 2010

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6. A relaxation model for memory with high storage density [O] . 1988

机译：高存储密度的内存松弛模型
7. A relaxation model for memory with high storage density [O] . 1988

机译：高存储密度的内存松弛模型

Relaxation Model for Memory with High Storage Density

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