Influence of the Resonant Acceptor State on the Magnetotransport Properties of Zero-Band-Gap Hg sub (1-x)Mn sub xTe

摘要

A comparative study of magnetotransport in a series of annealed and unannealed zero-band-gap Hg1-xMnxTe samples reveals the influence of a resonant acceptor state. In this system, the low-temperature transport properties result from the resonant nature of the acceptor level. We show that low-temperature negative magnetoresistance originates from an increase in the hole density within the resonant acceptor state rather than an increase in the hole mobility as proposed by others. Also, we have observed an unusual increase in the low-temperature electron mobility with decreasing temperature which we attribute to spatial ordering of the ionized acceptors within the resonant acceptor state. Reprints. (JHD)