Atomic Structure and Bonding of Si(111)-(Square Root of 3 X Square Root of 3)Al

摘要

The topographic structure and density of occupied states of the Si(111)-(square root 3 x square root 3)Al surface are studied using scanning tunneling microscopy (STM) and current imaging tunneling spectroscopy. Tunneling spectroscopy results are compared with theoretical band structure calculations and previous experimental studies. The results confirm a threefold adatom geometry for square root Al/Si(111) and prefer assignment to the T4 site over the H3. The STM images are interpreted in terms of tunneling through localized electronic states at the surface. Spectroscopy, Tunneling, Aluminum, Silicon, Reprints. (mjm)