New Wide-Band Darlington Amplifier.

摘要

A new wide-band Darlington amplifier topology is described. The configuration is well suited for maximum-bandwidth, moderate-gain, matched-impedance applications. A test circuit has been fabricated using a silicon bipolar monolithic technology with an f sub T of 9 GHz. Measured results show a 9.3-dB insertion gain and a 3.2-GHz bandwidth for the packaged device. Reprints. (jhd)