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Comparison of Vacuum and Semiconductor Field Effect Transistor Performance Limits. (Reannouncement with New Availability Information).

机译：真空和半导体场效应晶体管性能限值的比较。（重新公布新的可用性信息）。

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Eastman, L. F.;
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年度 1989
页码 1-8
总页数 8
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Field effect transistors; Triodes; Vacuum apparatus; Frequency response; Reprints; Vacuum microelectronics;

机译：场效应晶体管;三极管;真空设备;频率响应;重印;真空微电子学;

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2. Threshold voltage modeling and performance comparison of a novel linearly graded binary metal alloy gate junctionless double gate metal oxide semiconductor field effect transistor [J] . S. Sarkhel, B. Manna, S. K. Sarkar Indian Journal of Physics . 2015,第6期

机译：新型线性梯度二元金属合金栅极无结双栅极金属氧化物半导体场效应晶体管的阈值电压建模和性能比较
3. Ballistic performance comparison of monolayer transition metal dichalcogenide MX_2 (M = Mo, W; X = S, Se, Te) metal-oxide-semiconductor field effect transistors [J] . Jiwon Chang, Leonard F. Register, Sanjay K. Banerjee Journal of Applied Physics . 2014,第8期

机译：单层过渡金属二硫化锡MX_2（M = Mo，W； X = S，Se，Te）金属氧化物半导体场效应晶体管的弹道性能比较
4. Enhancing Performance in Thin Tilm Transistors with Vacuum or Solution Processed Amorphous Oxide Semiconductors Towards Display Applications [C] . Changdong Chen, Gongtan Li, MinMin Li, IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale . 2018

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5. Development of solution-processable high performance organic semiconductors for field effect transistors. [D] . Liu, Junying. 2010

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6. Semiconductors: High‐Performance Nonvolatile Organic Field‐Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers (Adv. Sci. 8/2017) [O] . Wen Li, Fengning Guo, Haifeng Ling, 2017

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7. Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) metal-oxide-semiconductor field effect transistors [O] . Chang, Jiwon, Register, Leonard F., Banerjee, Sanjay K. 2014

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8. Fabrication of n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with0.2 Micrometer Gate Lengths in 500 A Thin Film Silicon on Sapphire. (Reannouncement with New Availability Information) [R] . de la Houssaye, P. R., Offord, B. W., Minter, J. P., 1992

机译：在蓝宝石上的500 a薄膜硅中制造具有0.2微米栅极长度的n沟道金属氧化物半导体场效应晶体管。（重新公布新的可用性信息）

Comparison of Vacuum and Semiconductor Field Effect Transistor Performance Limits. (Reannouncement with New Availability Information).

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