Efficient Photovoltaic Devices for InP Semiconductor/Liquid Junctions.

摘要

The photovoltaic behavior of n-InP/metal and n-InP/liquid junctions is investigated. We find that the electrical properties of these semiconductor/liquid junctions are superior to those of n-InP/metal (Schottky barrier) systems, and the current-voltage characteristics are a strong function of the electromechanical potential of the liquid phase. Liquid contacts thus provide a possibility for the construction of more efficient photovoltaic devices than those available at present from Schottky barriers. Reprints. (RH)