Microfabrication of WO3-Based Microelectrochemical Devices.

摘要

A new photolithographic process for the patterning of WO3 is reported. A layer of sputtered polycrystalline WO3 can be patterned by a combination of photolithographic and dry etching processes to selectively cover a fraction of eight Pt microelectrodes each approx. 50 um long, 2 um wide, and 0.3 um thick, and spaced 1.2 um apart. The modified microelectrode arrays were characterized by electrochemistry, surface profilometry, and scanning electron microscopy. A pair of microelectrodes connected by WO 3 comprises a microelectrochemcial transistor with pH-dependent electrical characteristics based on the pH and potential dependent conductivity of WO3 associated with the reversible electrochemical reaction WO3+nH+ + ne =Hn WO3. Keywords: Microfabrication; WO; Microelectrochemical devices. (KT)