Diluted Magnetic III-V Semiconductors.

摘要

A new diluted magnetic III-V semiconductor of In(1-x)Mn(x)As(x = < or + 0.18) has been produced by molecular-beam epitaxy. Films grown at 300 C are predominantly ferromagnetic and their properties suggest the presence of MnAs clusters. Films grown at 200 C, however, are predominantly paramagnetic, and the lattice constant decreases with increasing Mn composition;both are indicative of the formation of a homogenous alloy. These films have n-type conductivity and reduced band gaps. Keywords: Semiconducting films; Reprints. (EDC)