Precision Imaging System (PIMS) Concept.

摘要

Direct modulation of a buried heterostructure (BH) Indium Gallium Arsenide Phosphide laser diode was performed up to 18 GHz, and FM properties were observed. The number of lasing modes increased with increasing modulation depth. For a given rf power, the FM index changed as the modulation frequency was increased. These measurements indicate that the nonlinear gain effects mainly influence the modulation characteristics of this laser, and wider bandwidths and modulation indexes can be achieved in this type of multimode device. Keywords: Semiconductor lasers; Direct current modulation; Fast detectors; Nonlinear gain effects; Modulation index; FM properties. (aw)