Laser Processing of Silicon On Sapphire (SOS) for Fabrication of Bipolar Transistors.

摘要

Nanosecond thermal processing using an excimer laser was used in fabrication of NPN bipolar transistors in silicon-on-sapphire (SOS). Functional devices with current gain approaching 100 were obtained. The deleterious effects of diffusion pipes in SOS material were minimized using rapid laser activation of an implanted dopant. Details of the device design fabrication, and test results are included in this report.