HVPE InGaN for LEDs- State of the Art and Horizons.

摘要

We grew unintentionally doped n-type InGaN layers in the temperature range from 600 to 750 deg C; using GaCl3, InCl3, and NH3 as gas sources; and argon as carrier gas. The InN content in the layers varied from 5 to 50 mole % depending on the growth conditions. Growth was performed on undoped n- GaN/sapphire films with a thickness of 2 to 20 microns, and on Mg-doped p- GaN/sapphire template with a thickness of 3-5 microns grown separately by HVPE. The thickness of the InGaN layers ranged from 20 to 300 nm. Device challenges for making a p-side down HVPE-grown n-InGaN/p-GaN single heterostructure LED have been previously discussed. The simplicity in the device structure is the attractive feature of these devices. We used this type of device structure for demonstration of a simple InGaN-based LED in current work. The structures were not optimized for performance.