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Low-Temperature Energy Relaxation in AlxGa(1-x)As/GaAs Heterojunctions

机译：alxGa（1-x）as / Gaas异质结中的低温能量弛豫

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Kawamura, T.; Das Sarma, S.; Jalabert, R.; Jain, J. K.;
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年度 1990
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总页数 6
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Heterojunctions; Solid state physics; Local oscillators; Gallium arsenides; Aluminumgallium arsenides; Relaxation; Electron transport; Reprints;

机译：异质结;固态物理;局部振荡器;砷化镓;砷化铝镓;弛豫;电子传输;重印;

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1. Concentration dependence of energy relaxation time in AlGaAs/GaAs heterojunctions: direct measurements [J] . E L Shangina, K V Smirnov, D V Morozov, Semiconductor science and technology . 2011,第2期

机译：AlGaAs / GaAs异质结中能量弛豫时间的浓度依赖性：直接测量
2. Effects of energy relaxation time on performance of AlGaAs/GaAs heterojunction bipolar transistor [J] . Horio K. Electronics Letters . 1989,第8期

机译：能量弛豫时间对AlGaAs / GaAs异质结双极晶体管性能的影响
3. Moderate mobility enhancement in single period AlxGa1-x As/GaAs heterojunctions with GaAs on top [J] . Journal of Applied Physics . 1982,第4期

机译：单周期AlxGa1-x As / GaAs异质结中适度的迁移率增强，顶部具有GaAs
4. Exciton Relaxation and Spin Dynamics in AlxGa_(1-x)As Films [C] . A. Amo, M. D. Martin, L. Kopotowski, International Conference on the Physics of Semiconductors . 2005

机译：Alxga_（1-x）中的激子放松和自旋动态作为电影
5. PICOSECOND AND STEADY-STATE SPECTROSCOPY OF THE WURTZITE SEMIMAGNETIC SEMICONDUCTOR CADMIUM(1-X)MANGANESE(X)SELENIDE (ENERGY RELAXATION, SPIN). [D] . JUNNARKAR, MAHESH R. 1986

机译：纤锌矿型半导电镉（1-X）锰（X）硒化物的稳态和稳态光谱（能量弛豫，自旋）。
6. Optimization of GaAs Nanowire Pin Junction Array Solar Cells by Using AlGaAs/GaAs Heterojunctions [O] . Yao Wu, Xin Yan, Wei Wei, 2018

机译：AlGaAs / GaAs异质结优化GaAs纳米线pin结阵列太阳能电池
7. Photoconverters with microrelief p-n-junction on a basis of p AlxGa₁₋x-p GaAs-n GaAs-n⁺ GaAs heterojunction [O] . Karimov A.V., Yodgorova D.M. 2005

机译：基于pAlxGa₁₋x-pGaAs-nGaAs-n⁺GaAs异质结的微浮雕p-n结光电转换器
8. Characterization of Semiconductor Device Processing Etchant Solutions for GaAsand p+ GaAs Layers Employed in AlxGa(1-x)As/GaAs Modfets and Related Heterojunction Devices [R] . Mayhew, B. F. 1988

机译：用于alxGa（1-x）as / Gaas mOsFET和相关异质结器件的Gaas和p + Gaas层的半导体器件处理蚀刻剂溶液的表征

Low-Temperature Energy Relaxation in AlxGa(1-x)As/GaAs Heterojunctions

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