Effects of Localization and Mesoscopic Phenomena on Ultrasonic Attenuation in aDisordered Piezoelectric Metal

摘要

The use of surface-acoustic-wave attenuation at subkelvin temperatures isproposed for the study of localization and mesoscopic phenomena in GaAs/Al(x)Ga(1-x)As heterojunctions. Based on the piezoelectric properties of GaAs, a diagrammatic interpretation is presented for electronic absorption in terms of coupling of the lattice strain to the electric current. Reprints. (JHD)