New Generation MMIC Amplifier Using InGaAs/InAlAs HEMTs.

机译：采用InGaas / Inalas HEmT的新一代mmIC放大器。

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An InP based monolithic integrated technology has been developed using InGaAs/InAlAs HEMTs and is applied for the first time to the realisation of a two-stage amplifier. The gain has a peak of 18.4 dB at 6.4 GHz and exceeds 15 dB from 6.0 to 9.6 GHz.

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作者
Weiss, M.; Ng, G. I.; Pavlidis, D.;
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年度 1990
页码 1-3
总页数 3
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Amplifiers; Staging; Reprints; Semiconductor devices; Microwave amplifiers;

机译：放大器;分级;重印;半导体器件;微波放大器;

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专利

1. New generation MMIC amplifier using InGaAs/InAlAs HEMTs [J] . Weiss M., Ng G.I. Electronics Letters . 1990,第4期

机译：使用InGaAs / InAlAs HEMT的新一代MMIC放大器
2. E-Band Low-Noise Amplifier MMICs Using Nanogate InGaAs/InAlAs HEMT Technology [J] . Issei WATANABE, Akira ENDOH, Takashi MIMURA, IEICE Transactions on Electronics . 2010,第8期

机译：使用Nanogate InGaAs / InAlAs HEMT技术的电子带低噪声放大器MMIC
3. A 280–310 GHz InAlAs/InGaAs mHEMT Power Amplifier MMIC with 6.7–8.3 dBm Output Power [J] . John Laurenz, Neininger Philipp, Friesicke Christian, IEEE microwave and wireless components letters . 2019,第2期

机译：具有6.7–8.3 dBm输出功率的280–310 GHz InAlAs / InGaAs mHEMT功率放大器MMIC
4. High reliability of 0.1 /spl mu/m MMIC amplifiers on both AlGaAs/inGaAs/GaAs and InGaAs/InAlAs/InP HEMTs [C] . Chou, Y.C., Leung, . 2001

机译：在AlGaAs / inGaAs / GaAs和InGaAs / InAlAs / InP HEMT上均具有0.1 / spl mu / m MMIC放大器的高可靠性
5. Development of millimeter-wave broadband power amplifier MMICs using gallium nitride HEMTs. [D] . Santhakumar, Rajkumar. 2010

机译：使用氮化镓HEMT的毫米波宽带功率放大器MMIC的开发。
6. Optimization of MBE Growth Conditions of In0.52Al0.48As Waveguide Layers for InGaAs/InAlAs/InP Quantum Cascade Lasers [O] . Piotr Gutowski, Iwona Sankowska, Tomasz Słupiński, 2019

机译：InGaAs / InAlAs / InP量子级联激光器的In0.52Al0.48As波导层MBE生长条件的优化
7. Sub-0.6 dB NF Low Power Differential to Single-Ended MMIC LNA Designs for the SKA using InGaAs/InAlAs/InP pHEMTs [O] . Arshad, Shahzad, Boudjelida, Boumedienne, Boulay, Sanae, 2009

机译：使用InGaas / Inalas / Inp pHEmT的sKa低于0.6 dB NF低功率差分至单端mmIC LNa设计
8. Experimental and Theoretical Characteristics of High Performance Pseudomorphic Double Heterojunction InAlAs/In0.7Ga0.3As/InAlAs HEMTs. [R] . Kwon, Y., Pavlidis, D., Brock, T. L., 1996

机译：高性能假晶双异质结Inalas / In0.7Ga0.3as / Inalas HEmTs的实验和理论特性。

New Generation MMIC Amplifier Using InGaAs/InAlAs HEMTs.

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