Research and Development on Advanced Silicon Carbide and Microwae FrequencySilicon Carbide-Based Device

摘要

The RF operation of bipolar transistors fabricated from alpha-(6H)SiC by CreeResearch investigated and improved from the standpoints of parasitic resistances and capacitances as well as device design and fabrication procedures. In addition IMPATT diode structures have been further developed, ohmic and Schottky contract materials selected and deposited and the design and construction of a new MBE/ALE system virtually completed. Keywords: Impatt diodes; Bipolar transistors; Silicon carbides; Thin films. (R.H.)