Investigation of Microwave Monolithic Integrated Circuit (MMIC) Non-ReciprocalMillimeter-Wave Components (Final Technical Report for March 1987-January 1990)

摘要

Two ferrite film deposition techniques were investigated in this program forpossible use in the monolithic integration of Gallium Arsenide electronic and magnetic millimeter-wave devices; (1) spin-spray plating (SSP) of nickel zinc ferrite films and (2) sputtering of barium hexaferrites with C-axis oriented normally to the film plane. The SSP technique potential for this application was demonstrated. Film structural characteristics were studied, as well as their adhesions to other substrates and the conditions for growth of thicker films. Multilayers totalling 25 microns in thickness were grown on semiconducting substrates. The SSP process occurs at about 100 C and was experimentally demonstrated not to damage Gallium arsenide MMIC devices. The magnetic characteristics of these films were comparable to ceramic materials. A scheme for the monolithic integration of magnetic and Gallium arsenide electronic devices was proposed and its feasibility experimentally demonstrated. The films showed higher dielectric loss than was desirable, possibly owing to high water content. A better drying technique is required. Barium ferrite films with C-axis texture were reproducibly grown on sapphire. Magnetic measurements yielded acceptable saturation magnetization and anisotrophy field. Ferromagnetic resonance was not observed, possibly due to broad linewidths. (Author)