Development and Testing of Radiation and Electromagnetic Pulse Hardened SiliconCarbide Based Electronics

摘要

There were three primary objectives for this reporting period. The first was toelectrically characterize junction diodes as a function of temperature. This included both current-voltage (I-V) and capacitance-voltage (C-V) measurements. The second was to fabricate low (about 125 V) and medium (about 450 V) voltage p-n junction rectifiers for neutron and gamma exposure tests. The third objective was to fabricate JFET devices with reduced gate and drain leakage currents than those discussed in the previous report and to package these devices in preparation for radiation testing.