GaAs-Based Diode Lasers on Si with Increased Lifetime Obtained by Using StrainedInGaAs Active Layer

摘要

Strained InGaAs/AlGaAs quantum well diode lasers have been fabricated on Sisubstrates for the first time. A GaAs buffer layer was grown on each Si wafer by temperature-cycled organometallic vapor phase epitaxy (OMVPE). The wafer was then transferred to a second reactor for OMVPE growth of a graded-index separate-confinement heterostructure single-quantum well laser structure. For lasers with a cavity length of 1000 micrometers, room-temperature pulsed threshold current densities as low as 174 and 195 A/cm2 have been obtained for active layer compositions of In0.02Ga0.98As and In0.05Ga0.95As, respectively. One laser with an In0.05Ga0.95As active layer operated cw for 56.5 h, a record lifetime for GaAs-based diode lasers on Si.