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New Ultra Low Permittivity Composites for Use in Ceramic Packaging of Ga:As Integrated Circuits.

机译:新型超低介电常数复合材料用于Ga:作为集成电路的陶瓷封装。

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This report documents the work that has been conducted at the Materials Research Laboratory (MRL), The Pennsylvania State University and Interamics in La Jolla, California, for the low permittivity project. The emphasis was on developing ultralow permittivity (K) substrate materials. Sol gel and reactive sputter deposited substrates were selected for further development into a viable substrate. Currently emphasis has shifted from development of ultra-low permittivity materials to putting down metallization on these low K substrates. Thus progress is being made in the direction of a prototype package which would utilize these substrates. This report starts off with the work done on the development of low K substrates and then moves on to the efforts on putting down metal traces and forming vias.

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