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MBE Growth, Material Properties, and Performance of GaSb-Based 2.2 MicrometersDiode Lasers

机译：mBE生长，材料特性和基于Gasb的2.2千分尺二极管激光器的性能

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摘要

Molecular beam epitaxy has been used to grow Gao.84Ino.16As0.14SbO.86/

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作者
Eglash, S. J.; Choi, H. K.;
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年度 1991
页码
总页数 7
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Semiconductor lasers; Cladding; Current density; Diodes; Layers; Length; Semiconductors; Stripes; Temperature; Epitaxial growth; Reprints;

机译：半导体激光器;包层;电流密度;二极管;层;长度;半导体;条纹;温度;外延生长;重印;

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专利

1. MBE growth of low threshold GaSb-based lasers with emission wavelengths in the range of 2.5-2.7 [J] . Kristijonas Vizbaras, Alexander Bachmann, Shamsul Arafin, Journal of Crystal Growth . 2011,第1期

机译：发射波长在2.5-2.7范围内的低阈值基于GaSb的激光器的MBE生长
2. Correlation of the MBE growth temperature, material quality, and performance of quantum cascade lasers [J] . G. Monastyrskyi, A. Aleksandrova, M. Elagin, Journal of Crystal Growth . 2013,第sepa1期

机译：MBE生长温度，材料质量和量子级联激光器性能的相关性
3. Near- and far-infrared quantum cascade lasers based on GaAs and GaN semiconductor materials: Devices design and MBE growth [J] . 電子情報通信学会技術研究報告. 電子デバイス. Electron Devices . 2019,第353期

机译：基于GaAs和GaN半导体材料的近端和远红外量子级联激光器：器件设计和MBE生长
4. MBE growth of wide-gap II-VI laser materials-real-time in-situ monitoring of critical material properties [C] . Park, R.M. . 1994

机译：宽间隙II-VI激光材料的MBE生长-关键材料性能的实时实时监测
5. Effect of polarity on growth and material properties of gallium nitride grown by ammonia MBE. [D] . Ishaug, Brian Edward. 2000

机译：极性对氨MBE生长的氮化镓的生长和材料性能的影响。
6. Analysis and Respond Surface Methodology Modeling on Property and Performance of Two-Dimensional Gradient Material Laser Cladding on Die-cutting Tool [O] . Guofu Lian, Mingpu Yao, Yang Zhang, 2018

机译：模具上二维梯度材料激光熔覆性能和性能的响应面方法学建模
7. The MBE growth and optimization of high performance terahertz frequency quantum cascade lasers [O] . Li LH, Zhu JX, Chen L, 2015

机译：高性能太赫兹频率量子级联激光器的mBE增长和优化
8. MBE Growth and Properties of GaN, InGaN and GaN/InGaN Quantum Well Structures for Laser Diode Applications [R] . Schetzina, J. F. 2001

机译：用于激光二极管应用的GaN，InGaN和GaN / InGaN量子阱结构的mBE生长和性质

MBE Growth, Material Properties, and Performance of GaSb-Based 2.2 MicrometersDiode Lasers

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