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Temperature Dependence of a Large Dynamic Range Photodetector Structure

机译:大动态范围光电探测器结构的温度依赖性

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A recently developed photodetector circuit exploits the exponential voltage-to-current characteristic of a MOSFET operated in the subthreshold region to achieve a logarithmic steady state response. This paper analyzes the temperature dependence of the circuit operation and presents experimental results demonstrating the capabilities and limitations of the model.

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