Leakage Current Measurements in SOI Devices

摘要

Total dose response of both NMOS and PMOS FETs fabrication on SOI substrates werestudied. Back channel leakage currents were studied. Two types of SOI substrates were chosen to study back channel leakage currents: SIMOX and ZMR. Subthreshold current-voltage characteristics as a function of total dose of the back channel and front channel of SIMOX and ZMR SOI substrates are reported. Some preliminary reports on the buried oxide leakage current are also provided.