Broad Area Distributed Gain, Distributed Index Profile GaAlAs Semiconductor LaserDiodes

摘要

High-power operation of a simple non-planar index-guided quantum wellheterostructure periodic laser array structure is described, in which lateral lasing is prevented in a manner that still allows for uniform and continuous front facet light emission. The compositional disordering and compensation effects of MeV oxygen implantation have been applied to form stripe geometry graded barrier quantum well heterostructure lasers. A new broad area as well as narrow stripe window laser structure is described, in which a nonabsorbing window region is formed in the vicinity of the mirror facets by utilizing a selectively etched substrate and the advantageous properties of uniform MOCVD growth on nonplanar substrates. The growth and characterization of strained layer InGaAs-GaAs heterostructure lasers by MOCVD has been addressed. Ethyldimethylindium has been shown to be suitable as a precursor for the growth of indium compounds. The results of time-zero characterization of strained-layer In(x)Ga(1-x)As-GaAs quantum well heterostructure laser diodes with 70-A-thick wells and indium mole fractions between 0.08 and 0.42 are reported. High power, in-phase locked operation of a wide aperture array is reported in which the lateral lasing and amplified spontaneous emission, characteristic of wide aperture arrays, are suppressed by a nonplanar active region. The antiguiding behavior of InGaAs-GaAs strained layer lasers has been exploited for form multiple-element oxide-defined-stripe phase-locked high power long wavelength (y > 0.95 um) strained layer quantum well heterostructure diode arrays operating in the in-phase fundamental array mode.