Optically Activated Modulator and GaAs-GaAlAs Compound Semiconductor ChannelWaveguide

摘要

We proposed and then developed for the first time an optically activatedmodulator (OAM) and modulator array on GaAs-GaAlAs compound semiconductor channel waveguides. A channel waveguide device with an optical activation window of 5 um in diameter was fabricated. Optical activation was produced by using HeNe 631.8 nm wavelength as the free-carrier generator and a 1.3 micrometer laser as the signal carrier. Thirty-three percent modulation depth was observed and 10-2 index modulation was experimentally confirmed on an OAM working in the phase modulation