Patterned Etching of Infrared Detector Arrays

摘要

We have attempted to develop a patterned etching technique for infrared detectorarrays based on photo-induced processes. The technique is based on the efficacy of methyl radical etching of II-VI compounds such as HgCdTe and CdTe. Methyl radicals were produced in a pattern above a HgCdTe substrate by photodissociation a radical precursor such as acetone or nitromethane using an excimer laser operating at 193 nm. Neither optical nor scanning electron microscopy could confirm the presence of any etching action. The failure of the proposed technique is ascribed to surface scavenging and/or reaction quenching mechanisms.