Influence of Defects in HgCdTe Grown by Molecular Beam Epitaxy (MBE) on Electrical Devices.

摘要

In this program the Microphysics Laboratory has been successful in: (1) identifying the presence of microtwins in HgCdTe(111)B grown by MBE which are limiting device performance and yield, (2) determining their relation with the structural and electrical properties of the epilayer (3) understanding their formation mechanism (4) controlling and eliminating their formation through stringent control of the growth parameters, and (5) in formulating the hypothesis that impurities, very likely diffusing from the substrate, are present in the epilayer.... Defects in MBE-grown MCT.