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Epitaxial AlGaAs/AlAs Distributed Bragg Reflectors for Green (550nm) Lightwaves

机译：用于绿色（550nm）光波的外延alGaas / alas分布布拉格反射器

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Young, D. B.; Babic, D. I.; DenBaars, S. P.; Coldren, L. A.;
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年度 1992
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总页数 3
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Laser mirrors; Aluminum gallium arsenides; Aluminum arsenides; Epitaxial growth; Bragg scattering; Light; Visible spectra; Laser beams; Reflectivity; Reprints;

机译：激光镜;砷化铝镓;砷化铝;外延生长;布拉格散射;光;可见光谱;激光束;反射率;重印;

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专利

1. Epitaxial AlGaAs/AlAs distributed Bragg reflectors for green (550 nm) lightwaves [J] . Young D.B., Babic D.I. Electronics Letters . 1992,第20期

机译：外延Al GaAs / AlAs分布式布拉格反射器，用于绿色（550 nm）光波
2. Comprehensive characterization of MOVPE-grown AlGaAs/AlAs distributed Bragg reflector structures by optical reflectance, X-ray diffraction and atomic force microscopy [J] . Bhattacharya A, Nasarek M, Zeimer U, Journal of Crystal Growth . 2005,第3a4期

机译：通过光学反射率，X射线衍射和原子力显微镜对MOVPE生长的AlGaAs / AlAs分布式布拉格反射器结构进行全面表征
3. Surface-grating distributed Bragg reflector quantum-well lasers fabricated in AlGaAs-GaAs asymmetric epitaxial waveguides [J] . Hoshin H. Yee, Steven Ayling, Richard M. De La Rue Applied optics . 1999,第30期

机译：AlGaAs-GaAs非对称外延波导中制造的表面光栅分布布拉格反射器量子阱激光器
4. Low series resistance N-type AlGaAs/AlAs distributed Bragg reflector grown by MOCVD [C] . Zhenyu Wen, Jianjun Li, Hongkang Cao, International conference on optical instruments and technology . 2020

机译：低串联电阻N型Algaas / Alas分布式Bragg反射器由MOCVD生长
5. GALLIUM-ARSENIDE - GALLIUM-ALUMINUM ARSENIDE DISTRIBUTED FEEDBACK AND DISTRIBUTED BRAGG REFLECTOR LASERS [D] . YEN, HUAN-WUN. 1976

机译：砷化镓-砷化铝镓分布的反馈和分布的Bragg反射器激光
6. A representative dataset of the self-reproducing light ray family between the multiple distributed Bragg reflectors of multiple VCSELs and the inner surface of plane-convex mirror [O] . Yude Li, Zheng Li, Mei Chen, 2021

机译：多个VCSEL的多分布式布拉格反射器和平面凸镜内表面之间的自我再现光线系列的代表性数据集
7. Very-lowtemperature molecular beam epitaxial growth of GaP/AlAs heterostructures for Distributed Bragg Reflector applications [O] . G.W. Pickrell 2012

机译：GaP / AlAs异质结构的极低温分子束外延生长，用于分布式布拉格反射器
8. Use of Tetraethyltin as an N Type Dopant Source in GaAs, AlGaAs, and AlAs forLasers and Bragg Reflectors Grown by MOCVD [R] . Pinzone, C. J., Neff, J. G., Chelakara, R. V., 1994

机译：使用四乙基锡作为N型掺杂剂源在Gaas，alGaas和alas中用于mOCVD生长的激光器和布拉格反射器

Epitaxial AlGaAs/AlAs Distributed Bragg Reflectors for Green (550nm) Lightwaves

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