High Sensitivity Probes for Silicon VLSI Internal Node Testing

摘要

This contract investigated several new technologies useful for real-time internalnode probing of VLSI integrated circuits. Electro-optic, electroabsorptive, photoconductive, and magnetic probe technologies were studied, and their relative merits and drawbacks compared. Testing parameters were less than or equal to 5ns temporal resolution, less than or equal to 50 mV sensitivity, and less than or equal to 2 spatial resolution. Both theoretical and experimental work was performed. Conclusions are drawn indicating the most promising candidates for future in-depth studies. Integrated circuit testing; opto-electronics; circuit probing; high-speed.