Reaction of LiE(SiMe3)2 with Compounds Containing Four-Measured Cores of the General Formula MEMCl (M = In, E = As, P; M = Ga, E = As): Novel Rearrangement Reactions to Form the Adducts R3M.As(SiMe3)3 (R = Me3SiCH2, M = In; R = Ph, M = Ga).

摘要

The last decade has seen considerable attention focused on the formation of suitable precursors to III-V compound semiconductors. As a part our research in this area, we recently reported the isolation of 'mixed bridge' compounds of the heavier group III elements (i.e., four-membered ring systems whose chlorine atom should allow introduction of other functional groups within these systems. From these precursors, the isolation of mixed III-V compound semiconductors may be possible. Herein we report the reactions of several mixed bridge compounds. All manipulations were performed using general Schlenk, dry box, or high vacuum techniques. Solvent (including those for NMR spectra) were appropriately dried and distilled under argon prior to use.