Review of Optically Controlled Microwave Devices and Circuits

摘要

The combining of optical and microwave technology is imminent, especially theintegration of optical and microwave circuit functions on the same circuit or chip. Since the MESFET is the main active component of the GaAs MMIC, it makes sense to explore its properties as an optical detector for the detection of microwave and control signals in fiber optic links. This report is a review of the state of the art in the control of microwave devices and circuits by optical means. First, the use of the MESFET as the optical detector for the control of microwave circuits will be reviewed. Then, investigation for the optical control of microwave devices such as the Gunn device, impact ionization avalanche transit time device (IMPATT), high electron mobility transistor (HEMT), and bipolar transistor will be presented. Finally, different types of photodetectors are discussed and compared with the MESFET.