MMIC GaAs Bonding Investigation

摘要

Results of an investigation into methods of applying thin film technology toimprove Gallium Arsenide (GaAs) Monolithic Microwave Integrated Circuit (MMIC) fabrication and packaging technologies are discussed. Progress in parallel research efforts to better understand the bonding of III-V compounds to substrates, to develop novel thin film deposition methods, and to design and synthesize new source compounds for III-V materials are reported. Techniques investigated include graphoepitaxy, upside-down structures, Ti bonding layers between metal and ceramic, and metal-organic chemical vapor deposition. The resulting interfaces of thin films and bulk materials were characterized in situ, where possible, by spectroscopic and diffraction analysis. A number of significant Rama spectra are provided. MMIC Fabrication, Raman Spectroscopy, MOCVD, Graphoepitaxy.