Pseudomorphic Narrow Gap Materials for High Performance Devices.

摘要

InAs field effect transistors (1 micrometer gate length) have been fabricated and showed extrinsic (intrinsic) transconductance as high as 414 mS/mm (670mS/mm). The cut-off frequency is shown to be more than a factor of two greater than is typical for GaAs based FETs with comparable gate length. Kink-free AlInAs/GaInAs/InP HEMTs have been fabricated. Heterojunction transistors with impact ionization at the emitter-base junction (i.e, when conduction band offset is larger than the band gap of the base) have been analyzed theoretically, and are shown to yield improved performance. Non-radiative Auger recombination in quantum wells has been analyzed in the context of strained lasers. We have also shown theoretically that infrared absorption at normal incidence due to intervalence subband transition am be greatly enhanced in light-hole and heavy-hole inverted strained GaInAs/AlInAs quantum wells.