Mechanistic Studies of Opto-Electronic Materials and Syntheses Using MultipleLaser and Surface Diagnostics

摘要

The objective of this program was the development of novel OMCVD/LCVD processesfor preparation of wide band-gap semiconductors and the elucidation of the basic reaction mechanisms in these processes, so as to control the deposition rates and to improve the opto-electronic properties of the materials. The synthesis and the mechanistic elucidation of wide band-gap III/V metal nitrides by OMCVD and LCVD, the dry-passivation of GaAs and the deposition of carbon nitride films, have been carried out with a unique UHV surface reaction system equipped with multiple gas-phase and surface species analyses. The system was constructed with joint support