Diamond Nucleation of Surfaces Using Carbon Clusters

摘要

Thin solid films of C(60) and C(70) have been used as nucleation layers for thegrowth of diamond thin films on a variety of substrate surfaces, including metal, insulator and semiconductors. Compared to other forms of carbon, such as graphite, amorphous carbon, soot, etc. it is found that the nucleation density on C(70) is equivalent to that of diamond seeds themselves. On the other hand diamond nucleation of C(60) is less favorable. We argue from our experiments that the reason for C(70) to have such favorable nucleating properties is its chemical stability and geometry. A working model is proposed to explain the nucleation of diamond on solid C(70) films. Application of this work extending to the growth of diamond on a wide range of substrates is also discussed. Diamond nucleation, Carbon clusters.