Molecular Beam Epitaxial Growth of High Quality lnSb

摘要

In this letter we report on the growth of high quality lnSb by molecular beamepitaxy that has been optimized using reflection high energy electron diffraction. A 4.8 micrometers InSb layer grown on GaAs at a growth temperature of 395 deg C and a III/V incorporation ratio of 1:1.2 had an x-ray rocking curve of 158 arcsec and a Hall mobility of 92 300 cm(2) V(-1) at 77 K. This is the best material quality obtained for InSb nucleated directly onto GaAs reported to date.