Reactive Oxygen-Assisted Ion Implantation into Metals and Products Made Therefrom

摘要

A method of ion implantation using oxygen backfill and a modified surface layerformed therefrom are provided. The method of ion implantation includes the steps of placing a substrate metal in an ion implantation vacuum chamber, introducing oxygen into the ion implantation vacuum chamber and directing a beam of ions at the substrate metal. The modified surface includes a substrate metal and implanted atoms at a surface of the substrate metal. The implanted atoms are integrated with the substrate metal. The substrate metal has an implanted atom concentration of at least 5 atomic % to a depth of over 250 A.