Investigation of Novel Electrical Transport Phenomena in Semimetal-Semiconductor Heterostructures.

摘要

The Sb/GaSb system has been proposed as a unique new material which has significant potential for quantum transport studies, electronic devices, incorporating semimetal/semiconductor heterostructures, and for infrared optical and nonlinear optical applications requiring an indirect narrow band-gap material. Researchers have demonstrated the growth of both single Sb/GaSb heteroepitaxial layers and elementary GaSb/Sb/GaSb multilayer structures using MBE and MEE on GaSb (111) substrates. Magnetotransport measurements have yielded electron and hole mobilities in excess of 3 x 10(exp 4) sq cm/V(dot)s, which correspond to mean free paths of > 2 micrometers for both carrier types. Further studies are currently underway to characterize the transport and optical properties of Sb/GaSb multilayer structures. Electrical Transport Phenomena, Heterostructures, Semimetals, Semimetal-Semiconductor Heterostructures, Devices, Antimonide semiconductors.