Industrial Exploitation of a Alternate Technology for the Production of HgCdTe Epilayers, Structures and Devices.

摘要

The program goals were: Estimate the total cost to produce an MBE-grown HgCdTe epitaxial wafer suitable for the industrial manufacture of an IR photo diode detector array. Establish manufacturing procedure for MBE-grown HgCdTe epitaxial layers in order to bring to the market a product which is suitable for FPAs. Growth of high quality HgCdTe single epilayers and heterostructures with extremely uniform physical properties. The following characteristics, according to the program goals, were expected to be reached at the end of this program.