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High-Power InGaAsP/GaAs 0.8 Micron Laser Diodes and Peculiarities of OperationalCharacteristics

机译：高功率InGaasp / Gaas 0.8微米激光二极管和工作特性的特殊性

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High-power operation of 3 W in pulse mode, 750 mW in quasi-continuous wave and650 mW in continuous wave per uncoated facet from 100-micron aperture has been demonstrated for 1-mm-long cavity InGaAsP/GaAs 808-nm laser diodes prepared by

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作者
Diaz, J.; Eliashevich, I.; He, X.; Yl, H.; Wang, L.;
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年度 1994
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总页数 3
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Semiconductor lasers; High power; Degradation; Threshold effects; Gallium arsenides; Aluminum gallium arsenides; Continuous waves; Thin films; Current density; Chemical vapor deposition; Indium alloys; Semiconductor diodes; Cavities; Reprints;

机译：半导体激光器;高功率;降解;阈值的影响;镓砷化物;铝镓砷化物;连续波;薄膜;电流密度;化学气相沉积;铟合金;半导体二极管;腔;重印;

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专利

1. Temperature dependence of threshold current density J_(th) and differential efficiency η_d of high-power InGaAsP/GaAs (λ=0.8 μm) lasers [J] . H. J. Yi, J. Diaz, I. Eliashevich, Applied Physics Letters . 1995,第3期

机译：高功率InGaAsP / GaAs（λ= 0.8μm）激光器的阈值电流密度J_（th）和差分效率η_d的温度依赖性
2. High-power 0.8 mu m InGaAsP-GaAs SCH SQW lasers [J] . Garbuzov D.Z., Antonishkis N.Y. IEEE Journal of Quantum Electronics . 1991,第6期

机译：高功率0.8μmInGaAsP-GaAs SCH SQW激光器
3. Design consideration and performance of high-power and high-brightness InGaAs-InGaAsP-AlGaAs quantum-well diode lasers (/spl lambda/=0.98 /spl mu/m) [J] . Yang G.W., Hwu R.J. IEEE journal of selected topics in quantum electronics . 2000,第4期

机译：高功率和高亮度InGaAs-InGaAsP-AlGaAs量子阱二极管激光器的设计考虑和性能（/ spl lambda / = 0.98 / spl mu / m）
4. Peculiarities of operation characteristics of high-power InGaAsP/GaAs 0.8 /spl mu/m laser diodes [C] . Razeghi, M., Diaz, . 1994

机译：高功率InGaAsP / GaAs 0.8 / splμm/ m激光二极管的工作特性
5. Fabrication of high power aluminum: Free 0.8 micron to 1.0 micron InGaAsP/InGaP/GaAs lasers for optical pumping [D] . Diaz, Jacqueline Estela 1997

机译：高功率铝的制造：用于光学泵浦的0.8微米至1.0微米的InGaAsP / InGaP / GaAs激光器
6. A Preliminary In Vitro Study on the Efficacy of High-Power Photodynamic Therapy (HLLT): Comparison between Pulsed Diode Lasers and Superpulsed Diode Lasers and Impact of Hydrogen Peroxide with Controlled Stabilization [O] . Gianluigi Caccianiga, Marco Baldoni, Carlo Angelo Ghisalberti, 2006

机译：高功率光动力疗法（HLLT）功效的体外初步研究：脉冲二极管激光器和超脉冲二极管激光器之间的比较以及过氧化氢的受控稳定作用
7. High continuous wave output power InGaAs/InGaAsP/InGaP diode lasers: effect of substrate misorientation [O] . Mawst, Luke J., Bhattacharya, Arnab, Nesnidal, Michael P., 1995

机译：高连续波输出功率InGaas / InGaasp / InGap二极管激光器：衬底误取向的影响
8. Temperature Dependence of Threshold Current Density Jth and DifferentialEfficiency Nd of High-Power InGaAsP/GaAs (Lambda = 0.8 Microns) Lasers [R] . Yi, H. J., Diaz, J., Eliashevich, I., 1995

机译：高功率InGaasp / Gaas（λ= 0.8微米）激光器的阈值电流密度Jth和微分效率Nd的温度依赖性

High-Power InGaAsP/GaAs 0.8 Micron Laser Diodes and Peculiarities of OperationalCharacteristics

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