Field-Emitter Arrays for RF Vacuum Microelectronics

摘要

SRI International has completed a program to develop field-emitter arrays forvacuum microelectronics. We have met the first-phase program goals of 5 mA total emission, with a current density of 5 A/cm2 for at least 2 hours and demonstrated modulation of the emission current at a frequency of 1 GHz. Principal efforts involved the development of a process for forming emitter cones in small diameter apertures and with improved aspect ratios to reduce stress accumulation on film, modification of reactive ion etching chemistry to eliminate sulfur contamination of the cathode, investigation of galvanic etching resulting from a deionized-water rinse, and methods of fabricating emitters arrays with increased geometric field-enhancement factors and higher packing densities. Final efforts involved the application of small-hole lithography to low-capacitance cathode geometry, and investigation of emitter-array performance by conducting Muller microscopic imaging, Auger spectroscopy, and emission microscope measurements. Field-emitter array, Vacuum microelectronics, Low-capacitance cathode.