Annular GMR-Based Memory Element

摘要

A memory element has a sandwich structure in which rings of ferromagneticmaterial are spaced apart by a layer of a nonmagnetic conductor (which is also typically a ring). These ferromagnetic rings will have differing magnetic hardness. At least one ring will be magnetically bard or antiferromagnetically pinned. At least one other ring will be magnetically softer than the hard or antiferromagnetically pinned ring. The nonmagnetic conductor is at least thick enough to prevent essentially all exchange coupling between the ferromagnetic rings. Conducting leads provide current to pass through the ferromagnetic rings, perpendicular to magnetic moments in the ferromagnetic rings.