Complementary 2-D MESFET for Low Power Electronics. Phase 1

摘要

The purpose of this project was to determine the feasibility of developing a p-channel 2-D MESFET for future low power complementary IC technologies. The project demonstrated the fabrication of prototype p-channel 2-D MESFETs having promising electrical characteristics, developed a p-channel 2-D MESFET device model which was implemented into a commercially available SPICE program, demonstrated the SPICE simulation of p-channel 2-D MESFET device characteristics as well as complementary 2-D MESFET circuits, and demonstrated that the complementary 2-D MESFET should have significantly lower power-delay product compared with existing technologies. Finally, the project evaluated the manufacturability and technology insertion issues of the new technology. jg p.1.