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Postfabrication Native-Oxide Improvement of the Reliability of Visible-SpectrumAlGaAs-In(AlGa)P p-n Heterostructure Diodes

机译：后加工原生氧化物改善可见光谱alGaas-In（alGa）p p-n异质结构二极管的可靠性

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摘要

Data are presented on the electrical behavior and the reliability ofpostfabrication native-oxide-passivated visible-spectrum AlGaAs-In (AlGa)P p-n heterostructure light emitting diodes (LEDs). The LEDs are oxidized (H2O + 2N, 500 deg, 1 h) after metallization, thus sealing all exposed AlGaAs crystal at cracks. fissures, and edges against atmospheric hydrolysis without degrading

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Richard, T. A.; Holonyak, N.; Kish, F. A.; Keever, M. R.; Lei, C.;
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年度 1995
页码
总页数 4
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Diodes; Aluminum; Visible spectra; N type semiconductors; Indium; Light emittingdiodes; P type semiconductors; Reprints; Degradation; Gallium arsenides; Cracks; Voltage; Crystals; Electrical properties; Oxidation; Phosphides; Metallizing;

机译：二极管;铝;可见光谱; N型半导体;铟;发光二极管; p型半导体;重印;降解;砷化镓;裂纹;电压;晶体;电性能;氧化;磷化物;金属化;

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1. PERFORMANCE COMPARISON OF p-n JUNCTION DIODES USING ZINC OXIDE AND COPPER PHTHALOCYANINE HYBRID NANOCOMPOSITES AND BILAYER HETEROSTRUCTURES [J] . N. PADMA, MANORANJAN GHOSH, SHASHWATI SEN, Nano: brief reports and reviews . 2014,第6期

机译：氧化锌和铜酞菁杂化纳米复合材料及双层异质结构对p-n结二极管性能的比较
2. Electrophoretically deposited polyaniline/ZnO nanoparticles for p-n heterostructure diodes [J] . Sadia Arneen, M. Shaheer Akhtar, S.G. Ansari, Superlattices and microstructures . 2009,第6期

机译：电泳沉积的聚苯胺/ ZnO纳米粒子用于p-n异质结构二极管
3. Light-emitting diodes of "warm" white luminescence on the basis of p-n heterostructures of the InGaN/AlGaN/GaN type coated with phosphors made of yttrium-gadolinium garnets [J] . Soshchin N.P., Galchina N.A., Kogan L.M., Semiconductors . 2009,第5期

机译：基于涂有钇d石榴石的磷光体的InGaN / AlGaN / GaN型的p-n异质结构，可实现“暖”白光发光二极管
4. High-voltage polarization-induced vertical heterostructure p-n junction diodes on bulk GaN substrates [C] . Qi Meng, Namoto Kazuki, Zhu Mingda, Annual Device Research Conference . 2015

机译：块状GaN衬底上的高压极化感应垂直异质结p-n结二极管
5. Defect-Mediated Carrier Transport Mechanisms in Vertical GaN p-n Diodes [D] . Robertson Bayless, Christian Andrew. 2019

机译：垂直GaN P-N二极管中的缺陷介导的载波传输机制
6. Synthesis and characterization of a Sb2Te3/Bi2Te3 p-n junction heterostructure via electrodeposition in nanoporous membranes [O] . Rashmi Rani, Sandrine Tusseau-Nenez, Pierre-Eugene Coulon, 2021

机译：纳米多孔膜电沉积的Sb2te3 / Bi2Te3 p-n结异质结构的合成与表征
7. Formation of misfit dislocations in strained-layer GaAs/In_xGa_1–xAs/GaAs heterostructures during postfabrication thermal processing [O] . Liu, X.W., Hopgood, A.A., Usher, B.F., 2003

机译：在后加工热处理过程中应变层Gaas / In _{x Ga _{1-x as / Gaas异质结构中失配位错的形成}}
8. Investigation of the Equivalent Circuit and Carrier Lifetimes of Si/SiGe Heterostructure P-N Diodes for Frequencies Between 0.5 and 18.5 MHz (Undersoekning av Ekvivalenta Kretsen Samt Laddningsbaerarnas Livslaengder f r Frekvenser Mellan 0,5 och 18,5 MHz i Si/SiGe Baserade Heterostruktur-Dioder av P-N Typ) [R] . Ahlfors, L. , Rudner, S. , Willander, M. 1987

机译：对于频率在0.5和18.5 mHz之间的si / siGe异质结pN二极管的等效电路和载波寿命的研究（Undersoekning av Ekvivalenta Kretsen samt Laddningsbaerarnas Livslaengder fr Frekvenser mellan 0,5 och 18,5 mHz i si / siGe Baserade Heterostruktur-Dioder av pN Typ）

Postfabrication Native-Oxide Improvement of the Reliability of Visible-SpectrumAlGaAs-In(AlGa)P p-n Heterostructure Diodes

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