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Tritertiarybutylaluminum as an Organometallic Source for Epitaxial Growth ofAlGaSb

机译：四叔丁基铝作为alGasb外延生长的有机金属源

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A new organometallic source tritertiarybutylaluminum (TTBAl) has been used ingrowth of Al(x)Ga1(-x)Sb epilayers by low pressure organometallic vapor phase epitaxy. Ternary alloys were grown over the whole composition range 0

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Wang, C. A.; Finn, M. C.; Salim, S.; Jensen, K. F.; Jones, A. C.;
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年度 1995
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总页数 4
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Organometallic compounds; Epitaxial growth; Aluminum; Gallium antimonides; Mirrors; Sources; Reprints; Conductivity; Layers; Gallium arsenides; Photoluminescence; Morphology; Substrates; Alloys; Surfaces; Butyl radicals; Transitions; Ternary compounds; P;

机译：有机金属化合物;外延生长;铝;锑化镓;镜子;来源;重印;电导率;层;砷化镓;光致发光;形态学;基质;合金;表面;丁基;过渡;三元化合物; p;

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1. Metal organic vaper phase epitaxy growth of high-quality AllnSb using tritertiarybutylaluminum and tris(dimethylamino)antimony sources [J] . Yoshikawa Akira, Moriyasu Yoshitaka, Nagatomi Takaharu, Japanese journal of applied physics . 2020,第3期

机译：使用Triterybutylaluminum和Tris（二甲基氨基）锑来源的高质量Allnsb的金属有机助力阶段外延生长
2. Organometallic vapor phase epitaxial growth of GaN on ZrN/AlN/Si substrates [J] . Mark H. Oliver, Jeremy L. Schroeder, David A. Ewoldt, Applied Physicsletters . 2008,第2期

机译：ZrN / AlN / Si衬底上GaN的有机金属气相外延生长
3. Organometallic vapor phase epitaxial growth of GaN on a 3c-SiC/Si(111) template formed by C~+ -ion implantation into Si(111) substrate [J] . A. Yamamoto, T. Yamauchi, T. Tanikawa, Journal of Crystal Growth . 2004,第2a3期

机译：在3c-SiC / Si（111）模板上通过C〜+离子注入Si（111）衬底形成的GaN有机金属气相外延生长
4. Growth of Semiconductor Nanowires from Organometallic Sources Using Cbe and Movpe [C] . Lars Samuelson International Symposium on Runaway Reactions, Pressure Relief Design and Effluent Handling American Institute of Chemical Engineers/American Chemical Society Management Conference . 2005

机译：使用CBE和MOVPE从有机金属源的半导体纳米线的生长
5. Application of limited reaction processing to atomic-layer epitaxy: Epitaxial growth of cadmium telluride using organometallic precursors. [D] . Emerson, Robert Michael. 1993

机译：有限反应处理在原子层外延上的应用：使用有机金属前体外延生长碲化镉。
6. Structural and optical properties of position-retrievable low-density GaAs droplet epitaxial quantum dots for application to single photon sources with plasmonic optical coupling [O] . Eun-Hye Lee, Jin-Dong Song, Il-Ki Han, 2015

机译：位置可获取的低密度GaAs液滴外延量子点的结构和光学性质用于等离激元光学耦合的单光子源
7. Selective epitaxial growth of stepwise SiGe:B at the recessed sources and drains: A growth kinetics and strain distribution study [O] . Sangmo Koo, Hyunchul Jang, Sun-Wook Kim, 2016

机译：在凹陷源和漏极处逐步siGe：B的选择性外延生长：生长动力学和应变分布研究

Tritertiarybutylaluminum as an Organometallic Source for Epitaxial Growth ofAlGaSb

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